Indium Phosphide

Indium Phosphide (InP) Substrates

Vital supplies high quality Indium Phosphide (InP) wafers, from 2”to 4” in diameter for telecommunications and microelectronics applications. InP wafer are provided un-doped, Fe-doped, S-doped , and Zn-doped.

Market and Application

InP is an important III-V compound and semiconductor material with advantages of high electron mobility, good radiation stability, and large band gap. Indium Phosphide has particular advantage in two applications:
  1. Photonics: Emission and detection capacities with more than 1,000nm wave length
  2. RF: High-speed and low noise performance in high frequency RF applications. InP is the first choice for performance-driven niche markets in communication, radar, test equipment, and radiation measurement.

Item Unit Semi-insulating Specifications Semi-conduct Specifications
Conduct Type  
Crystal Growth Method   VGF VGF
Dopant   Fe S,Sn/Undoped/Zn
Diameter inch 2",3",4" 2",3",4"
Wafer Orientation*   (100)±0.5° (100)±0.5°
Resistivity (at RT) ≥0.5x107  
Carrier Concentration cm-3 N/A (0.8-8)x1018/(1-10)x1015/(0.8-8)x1018
Mobility cm2/v.s ≥1000 1000-2500/3000-5000/50-100
Etch Pit Density (EPD) /cm2 1500-5000 100-5000/≤5000/≤500
Laser Marking   Upon request Upon request
Thickness* μm (350-675)±25 (350-675)±25
TTV (P/P) μm ≤10 ≤10
TTV (P/E) μm ≤15 ≤15
SurfaceSides 1 & 2Polished/EtchedPolished/Etched
Cassette or single
wafer container
Cassette or single
wafer container